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Physics-Informed Numerical Modeling and Performance Assessment of AlGaN/GaN/BGaN Double-Gate Dual-Channel High Electron Mobility Transistor Architectures
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AlGaN/GaN HEMT
BGaN buffer
double-gate architecture
dual-channel transistor
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Abstract
The continuous scaling of high electron mobility transistor (HEMT) technologies based on wide-bandgap III–V semiconductors has enabled significant advancements in high-power, high-frequency, and high-temperature electronics. This study presents a physics-informed numerical modeling framework for analyzing the performance of AlGaN/GaN/BGaN double-gate dual-channel HEMT architectures. The proposed approach integrates semiconductor transport physics, polarization-induced charge formation, trapping phenomena, and mobility degradation models within a unified simulation environment. Special emphasis is placed on dual-channel conduction enhancement, electrostatic control improvement via double-gate engineering, and the role of BGaN buffer layers in mitigating leakage and improving thermal stability.
The modeling strategy is grounded in polarization theory governing two-dimensional electron gas (2DEG) formation (Ambacher et al., 2000), while incorporating advanced device-level effects such as current collapse (Mizutani et al., 2003), trapping dynamics (Mitrofanov and Manfra, 2004), and surface-state-induced dispersion (Doverspike et al., 1995). Furthermore, thermal and phonon transport effects influenced by piezoelectric coupling are considered in alignment with GaN nanostructure behavior (Zhu and Luo, 2016). The study employs a physics-informed numerical framework consistent with device simulation methodologies described by Selberherr (1984) and SILVACO ATLAS tools (2010).
Simulation results demonstrate that the double-gate dual-channel architecture significantly enhances drain current density, suppresses short-channel effects, and improves breakdown voltage compared to conventional single-channel HEMTs. The introduction of BGaN buffer layers further improves carrier confinement and reduces parasitic leakage pathways. The findings establish a robust foundation for next-generation GaN-based power and RF electronics optimized through physics-informed modeling.
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References
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