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Advanced Design and Performance Enhancement of High Electron Mobility Transistors via High-k Dielectric Integration
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Keywords
High Electron Mobility Transistor
HEMT
High-k Dielectric
Dual Gate TFET
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Abstract
High Electron Mobility Transistors (HEMTs) are pivotal in high-frequency and high-power electronic applications due to their superior electron transport characteristics. This study investigates the integration of high-k dielectric materials into HEMTs to enhance performance metrics, including breakdown voltage, drain current, and gate leakage reduction. Employing a systematic analysis of dielectric modulation, dual gate structures, and field plate engineering, this research demonstrates that high-k integration substantially improves device efficiency and stability. Simulation and experimental findings reveal that material selection, gate overlap, and structural design critically affect HEMT performance, offering pathways for next-generation high-power, high-speed electronic devices. Notably, diamond-overgrown InAlN/GaN HEMTs exhibit enhanced thermal and electrical robustness, confirming the practical viability of high-k dielectric integration (Alomari et al., 2011).
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References
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