Dr. Lina Hassan Al-Mutairi, “Physics-Informed Numerical Modeling and Performance Assessment of AlGaN/GaN/BGaN Double-Gate Dual-Channel High Electron Mobility Transistor Architectures”, Int. Res. Jour. of Com. & Ele. Engg., vol. 12, no. 6, pp. 33–40, Dec. 2025, Accessed: Oct. 21, 2026. [Online]. Available: https://urgcee.org/index.php/ircee/article/view/144