[1]
Dr. Nikolaos Papadopoulos and Dr. Maria Georgiou, “Comprehensive Modeling and Analysis of Front- and Back-Gated 6 nm HEMTs Utilizing High-K Dielectric Layers”, Int. Res. Jour. of Com. & Ele. Engg., vol. 11, no. 1, pp. 22–28, Apr. 2024, Accessed: Oct. 21, 2026. [Online]. Available: https://urgcee.org/index.php/ircee/article/view/96