DR. LINA HASSAN AL-MUTAIRI. Physics-Informed Numerical Modeling and Performance Assessment of AlGaN/GaN/BGaN Double-Gate Dual-Channel High Electron Mobility Transistor Architectures. International Research Journal of Computer and Electronics Engineering, [S. l.], v. 12, n. 6, p. 33–40, 2025. Disponível em: https://urgcee.org/index.php/ircee/article/view/144. Acesso em: 21 oct. 2026.