DR. NIKOLAOS PAPADOPOULOS; DR. MARIA GEORGIOU. Comprehensive Modeling and Analysis of Front- and Back-Gated 6 nm HEMTs Utilizing High-K Dielectric Layers. International Research Journal of Computer and Electronics Engineering, [S. l.], v. 11, n. 1, p. 22–28, 2024. Disponível em: https://urgcee.org/index.php/ircee/article/view/96. Acesso em: 21 oct. 2026.